Drift of minority charge carriers across the junction.
Class 12 Physics
Chapter 14 Semiconductor Electronics Session 2024-2025.
What is the cause of a small leakage current in reverse bias arrangement of a p – n junction?
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Drift of minority charge carriers across the junction.
Class 12 Physics
Chapter 14 Semiconductor Electronics Session 2024-2025.
The small leakage current in reverse bias of a p-n junction is caused by the thermal generation of electron-hole pairs, which creates a tiny current despite the large potential barrier.
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