Doping of an intrinsic semiconductor means deliberately introducing a controlled quantity (generally 1 part in 10° parts or 0.0001%) of impurity element which is either pentavalent or trivalent so as to obtain n-type and p-type semiconductors, respectively. The electrical conductivity of an extrinsic semiconductor formed as a result of doping is many fold increased as compared to that of undoped intrinsic semiconductor.
Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.