When an intrinsic semiconductor is doped with a trivalent impurity (say aluminium), an additional acceptor energy level is formed slightly above the top of the valence band. As a result energy gap is reduced to a large extent. Class 12 ...
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When an intrinsic semiconductor is doped with a trivalent impurity (say aluminium), an additional acceptor energy level is formed slightly above the top of the valence band. As a result energy gap is reduced to a large extent. Class 12 ...