Conductivity of n-type semiconductor is greater because mobility of electrons is more than that of holes. Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.
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Reverse bias. Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.
Drift of minority charge carriers across the junction. Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.
Forward biased. Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.
At absolute zero temperature i.e., at 0 K. Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.
1 (i.e., nh = ne = n₁). Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.
A pure semiconductor, in which no impurity has been added, (i.e., no doping has been done), is called an intrinsic semiconductor. Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.
A hole is a seat of positive charge which is produced when an electron breaks away from a covalent bond in a semiconductor. Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.
The four valence electrons in carbon are in the second orbit but in silicon these are in third orbit. Hence, energy required to take out an electron from carbon is Eg = 5.4 eV but for silicon Eg = 1.1 ...
In both these processes total binding energy of products is more than the total binding energy of reactants. As a result energy is released which is equal to the difference between binding energy of products and binding energy of reactants.