A slab of p-type or n-type semiconductor, howsoever flat, will have roughness much larger than the interatomic crystal spacing. Hence, on joining p – and n-type slabs continuous contact at the atomic level is not possible and the two will ...
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In a n-type semiconductor dopant is pentavalent and electrons are majority charge carriers. However, a trivalent material is used as a dopant to obtain p-type semiconductor and holes are the majority charge carriers. Class 12 Physics Chapter 14 Semiconductor Electronics ...
Extrinsic semiconductor is a pure semiconductor doped with controlled quantity of either a trivalent or a pentavalent impurity. Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.
The process of adding either pentavalent or trivalent impurity in a controlled and small quantity in a pure semiconducting material is called doping. Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.
Forward biased. Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.
At absolute zero temperature i.e., at 0 K. Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.
1 (i.e., nh = ne = n₁). Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.
A pure semiconductor, in which no impurity has been added, (i.e., no doping has been done), is called an intrinsic semiconductor. Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.
A hole is a seat of positive charge which is produced when an electron breaks away from a covalent bond in a semiconductor. Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.
The four valence electrons in carbon are in the second orbit but in silicon these are in third orbit. Hence, energy required to take out an electron from carbon is Eg = 5.4 eV but for silicon Eg = 1.1 ...