Doping of an intrinsic semiconductor means deliberately introducing a controlled quantity (generally 1 part in 10° parts or 0.0001%) of impurity element which is either pentavalent or trivalent so as to obtain n-type and p-type semiconductors, respectively. The electrical conductivity ...
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No, we cannot measure the potential barrier across a p-n junction by simply connecting a voltmeter across the junction because resistance across the junction is almost infinite and no current will flow through the voltmeter. Class 12 Physics Chapter 14 Semiconductor ...
A slab of p-type or n-type semiconductor, howsoever flat, will have roughness much larger than the interatomic crystal spacing. Hence, on joining p – and n-type slabs continuous contact at the atomic level is not possible and the two will ...
In a n-type semiconductor dopant is pentavalent and electrons are majority charge carriers. However, a trivalent material is used as a dopant to obtain p-type semiconductor and holes are the majority charge carriers. Class 12 Physics Chapter 14 Semiconductor Electronics ...
Extrinsic semiconductor is a pure semiconductor doped with controlled quantity of either a trivalent or a pentavalent impurity. Class 12 Physics Chapter 14 Semiconductor Electronics Session 2024-2025.